Mitsubishi Electric introduced a new production line compatible with silicon wafers with a diameter of 300 mm at its Fukuyama Plant.
🟦 Mitsubishi Electric Establishes New Production Line for Latest 300mm Wafers at Fukuyama Plant
Mitsubishi Electric has established a new production line compatible with 300mm silicon wafers at its power semiconductor plant in Fukuyama City, Hiroshima Prefecture. The Fukuyama Plant is a semiconductor factory acquired from Sharp in 2020, and has converted manufactured products to power semiconductor manufacturing and started operations in November 2021. From April 11, mass production was carried out using a 2022mm silicon wafer substrate. The 4mm wafer line is expected to go into series production in spring 200. The total investment in the Fukuyama Plant, including land and building acquisition costs, will be approximately 300 billion yen.
🟦 Increase production efficiency with large diameter 300mm wafers
In recent years, the demand for power semiconductors in products such as electric vehicles, air conditioners, and renewable energy has been increasing, and technology for efficient control is required. In response to this, it is necessary to increase production capacity to continue stable supply. Large-diameter 300mm diameter wafers are supported to improve production efficiency. Compared to existing 200mm diameter wafer equipment, more similar products can be manufactured per wafer.
We are also focusing on the production of SiC (silicon carbide) power semiconductors. In order to respond to future increases in market demand, we are also planning to invest approximately 1000 billion yen to establish a new plant in Kumamoto.
In order to respond to the growing demand for power semiconductors, Mitsubishi Electric has introduced a new production line compatible with silicon wafers with a diameter of 300 mm at its Fukuyama Plant, aiming to start mass production in the spring of 2024.
In silicon power semiconductors, the diameter of 300mm wafers is also increasing.