🟦 Toshiba makes large-scale investment in power semiconductors

New building with 100 billion yen to increase production capacity by 2.5 times the production capacity of power semiconductors

🟦 Toshiba to invest 100 billion yen in power semiconductors

Toshiba will construct a new plant on the premises of Kaga Toshiba Electronics, a semiconductor production subsidiary. The new building will be a power semiconductor manufacturing building that will increase overall production capacity from 1.9 times to 2.5 times, which was previously targeted. Kaga Toshiba was also promoting the introduction of a new production line with 300mm support, aiming to start operation in the existing building from October 2022 to March 2023. The total investment amount combined with the existing plan will be approximately 130 billion yen. All manufacturing equipment at the new plant will be compatible with large-diameter wafers with a diameter of 300 mm. Compared to devices that support the current mainstream 200 mm diameter wafers, many products of the same type can be manufactured per wafer, which increases production efficiency.
Power semiconductors are indispensable for power suppression in electric vehicles (EVs) and telecommunications and industrial equipment. According to Toshiba, the power semiconductor market in 2030 is expected to grow to about 4 trillion yen, nearly double the level of 2020. As the trend toward decarbonization intensifies, it will be a strategy to increase supply capacity in anticipation of an increase in global demand.

🟦SiC power silicon instead of semiconductor

Toshiba’s main power semiconductors are low-voltage MOSFETs of 250 volts or less used in automobiles, power supplies, telecommunications equipment, and other products. While each power semiconductor company is making investments in SiC (silicon carbide) that is suitable for high output, Toshiba will work to improve the production capacity of silicon power semiconductors instead of SiC.
In addition, Toshiba is focusing on next-generation power semiconductors not on SiC, but on GaN (gallium nitride). Compared to SiC devices, GaN is characterized by the fact that it can realize a higher switching frequency. High frequency is advantageous for miniaturization and high efficiency of power supply circuits using power semiconductors.



Toshiba invests in silicon 300mm wafers to increase production capacity of low-voltage power semiconductors, which is its specialty field

In the power semiconductor business, Mitsubishi Electric is actively investing 130 billion yen and Fuji Electric 190 billion yen. I think they are expecting subsidies from the Japanese government.

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