🟦Japan Government supports power semiconductor development

By realizing high performance and efficiency of next-generation power semiconductors (SiC and GaN), we aim to reduce power loss of more than 50% and reduce costs for converters, etc., and promote their popularization.

🟦 Government Supports Development of Next-Generation Power Semiconductors

The Japan government aims to halve power loss by 2030 and supports the development of silicon carbide (SiC) and gallium nitride (GaN) power semiconductors. Of the 2 trillion yen fund to support research and development of decarbonized technologies, we have decided to contribute approximately 30.5 billion yen over the next 10 years from the Green Innovation Project of the New Energy and Industrial Technology Development Organization (NEDO).
We will subsidize 1/2~1/3 of the cost for energy-saving technology for power semiconductors that supply and control power, and for projects that establish a manufacturing process with 8 inches that reduces SiC production costs.

  • Development of next-generation power semiconductor device manufacturing technology
    • ROHM
      : for industrial equipment
    • Toshiba
      : For renewable energy and server power
    • Denso
      : For electrified vehicles

ROHM will establish technology for mass production of semiconductors from 8-inch large-diameter wafers made of SiC, a next-generation material with excellent energy-saving performance. Among the manufacturing processes, we will develop a method to uniformly realize a technology for creating a layer called “epi” on the wafer even if the diameter is large. The developed production line will be installed in the new building of the factory in Chikugo City, Fukuoka Prefecture.
Toshiba is developing products for railways, offshore wind power generation, and data centers. We have set a target of more than triple the production volume of SiC power semiconductors by FY23 compared to FY20 and more than 10 times by FY25.
Denso will focus on SiC power semiconductors. SiC has excellent heat resistance and is also used in Toyota’s new hydrogen fuel cell vehicle “Mirai”.

🟦 Global market share from 2% to 2030% in 4

Next-generation semiconductors that use SiC and GaN instead of silicon, which have been the mainstream wafer materials, are expected to improve energy-saving performance. Power semiconductors are a field in which Japan companies such as Mitsubishi Electric, Toshiba, and Fuji Electric have a presence in more than 20% of the global market. Next-generation semiconductors are attracting attention as a decarbonization technology, and investment is active worldwide. If we are late in terms of development investment or the construction of a mass production system, we may be threatened by overseas players, so the government will support it. There seems to be a shadowy goal of increasing the global share of power semiconductors in Japan from 20% to 40% by 2030.


In order not to lag behind overseas competitors, the government will support the development of next-generation power semiconductors

If you are serious about increasing the global share of power semiconductors from 20% to 40% by 2030 and earning foreign currency through exports, I would like you to set a clear goal.