ROHM and TSMC have entered into a strategic partnership to develop and mass-produce high-performance automotive GaN power semiconductors.
🟦 ROHM and TSMC have partnered! A new step towards mass production of automotive GaN power semiconductors
Lowry and TSMC announced a strategic partnership for the development and mass production of automotive GaN (gallium nitride) power semiconductors. This partnership will combine ROHM’s GaN device development technology with TSMC’s cutting-edge GaN-on-Silicon process technology to create next-generation power semiconductors with high-voltage and high-frequency characteristics. With the proliferation of electric vehicles (EVs) and the surge in demand for automotive semiconductors, the collaboration between the two companies will be a game-changer in enhancing EV performance while reducing environmental impact.
🟦 Background of the Partnership and the Potential of GaN Semiconductors in Interest
GaN power semiconductors are more efficient with low power loss and provide stable performance in high-temperature environments compared to semiconductors using traditional silicon substrates. This technology is currently used in AC adapters and industrial equipment, but it is in increasing demand, especially in automotive applications such as EV on-board chargers (OBCs) and inverters.
TSMC has a proven track record in logic semiconductors, but in recent years it has also focused on the field of power semiconductors, and its partnership with ROHM is an extension of that. In addition, ROHM made a record capital investment in FY2023 and is also focusing on its own SiC power semiconductors, so it aims to innovate more efficiently by outsourcing the production of automotive GaN semiconductors to TSMC.
🟦 Summary
The partnership between ROHM and TSMC will lead to mass production of next-generation automotive GaN power semiconductors in 2026. This initiative is an important step in improving EV performance while reducing environmental impact.
In terms of SiC power semiconductors, we are investing in our own technology and equipment to enhance our unique strengths. On the other hand, GaN power semiconductors are characterized by the fact that they aim to maximize development speed and production efficiency by utilizing world-class manufacturing technology through a partnership with TSMC.
