🟦 High-speed eFuse improves the safety of SiC/GaN power devices

Asahi Kasei Electronics and Silicon Austria Labs Successfully Validate eFuse Technology in Automotive High-Voltage Applications
旭化成エレクトロニクスとSilicon Austria Labs、 自動車用高電圧アプリケーションにおけるeFuseの技術検証に成功 | 2024年度 | ニュース | 旭化成株式会社
旭化成エレクトロニクス株式会社 (本社:東京都千代田区、社長:篠宮 秀行、以下「当社」) と欧州のエレクトロニクスおよびソフトウェアベースのシステムの研究機関であるSilicon Austria Labs GmbH(以下「SAL」)は、炭化...

🟦eFuse Improves Safety of SiC/GaN Power Devices

Asahi Kasei Electronics and SAL have successfully jointly verified eFuse technology for SiC power devices. This technology has the potential to significantly improve the safety of systems such as car chargers, as well as reduce parts and maintenance costs.


🟦 Why do you need a high-speed eFuse?

In high-voltage applications such as electric vehicles, there is a growing shift to power devices using next-generation semiconductor materials such as SiC and GaN to achieve higher efficiency. However, SiC/GaN power devices are more expensive than Si devices and can be damaged if not quickly protected in the event of an overcurrent.

Conventional fuses may not be able to protect the device due to the long shut-off time. The eFuse has a faster response time than conventional fuses and can instantly shut down circuits when it detects abnormalities such as short circuits or overcurrents.


Verification of Asahi Kasei Electronics and SAL to safely protect SiC/GaN power devices and contribute to improving overall system performance with fast response speed and high-precision current limiting functions that could not be achieved with conventional fuses

Conventional fuses have the problem that there are large individual differences, and it is difficult to extract the limit performance to ensure a safety margin. On the other hand, the eFuse maximizes the performance of the device while ensuring higher safety than conventional fuses due to its fast response speed and high-precision current limiting function.

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