SK Hynix officially starts manufacturing 1αnmDRAM products using EUV lithography technology
🟩 “1αnm” DRAM increases production efficiency
The 1αnm generation can increase the number of DRAM chips produced from wafers of the same size by about 25% compared to the previous generation. SK Hynix said, “We expect this 1αnm DRAM to contribute to easing the supply-demand situation in the global market due to the increase in global DRAM demand.” In addition, thanks to a new process, DDR memory of the same standard reduces power consumption by 20% and is more power efficient.
what is the 1α nm process?
The 1α nm process is the fourth generation of 10nm technology used in DRAM manufacturing following the 1x, 1y, and 1z processes. SK Hynix does not specify a specific wire width of 1α nm, but the prevailing view in the industry is 15 ~ 14 nm.
- DRAM 10nm generation process
- 2016~ 1st generation 1x nm (19~18nm)
- 2017~ 2nd generation 1y nm (17~16nm)
- 2019~ 3rd generation 1z nm (16~15nm)
- 2021~ 4th generation 1α nm (15~14nm)
- 202x~ 5th generation 1β nm (?)
🟩Miniaturization with EUV lithography technology
In the case of semiconductors used in advanced devices, it is necessary to reduce the frequency line width to ultra-miniaturization, and the adoption of EUV (Extreme Ultraviolet) lithography technology, which is an ultra-short wavelength, is expanding in earnest. SK Hynix emphasizes the advantages of using EUV in DRAM manufacturing, which led to a 25% density increase in the 1α nm process. The 1α nm EUV process has shown stability in manufacturing and the company plans to use it in all future products.
🟩Products introduced in EUV
SK Hynix had been verifying the technology by using EUV for a small part of the previous generation of 1ynm DRAM before applying EUV at 1α nm, but this is the first time that EUV has been applied to mass production. Mass production began with 8 Gbit (Gb) LPDDR4 mobile DRAM, the most used in smartphones and other portable devices. It will be able to stably execute the fastest transfer rate of 4266Mbps in the standard LPDDR4 mobile DRAM specification, and reduce power consumption by 20%. In addition, the DDR5 standard DRAM announced in October 2020 will be produced in a 1α nm EUV process from the beginning of 2022.
Samsung will start using EUV in DRAM production from 2020, and Micron Technology plans to use EUV from the 1βnm generation in 2024.
The “1αnm” generation DRAM has better production efficiency and power efficiency than the previous generation.
THE MERIT OF IMPROVING PRODUCTION EFFICIENCY CAN LEAD TO THE RESOLUTION OF THE SEMICONDUCTOR SHORTAGE DUE TO THE INCREASE IN GLOBAL DEMAND FOR DRAM. THE MINIATURIZATION OF SEMICONDUCTORS WILL MAKE PEOPLE’S LIVES MORE CONVENIENT.