The 1200V SiC MOSFET using QDPAK announced by Nexperia is drawing attention as a key product that demonstrates the shift in the SiC market from “chip performance” to “system performance including heat dissipation and implementation.”
🟧 Nexperia refreshes 1200V SiC MOSFETs with QDPAK, significantly enhancing output and heat dissipation performance with top-side cooling
Dutch company Nexperia has announced a product lineup featuring a new power semiconductor package called “QDPAK” for its 1200V SiC MOSFET. QDPAK adopts a top-side cooling method that dissipates heat from the top surface of the package, achieving both high output and simplified thermal design. We offer both industrial-grade and automotive-certified products, targeting the power supply market for EVs and data centers.
- Product lineup
: RDS(on) on-resistors are available in 17mΩ, 30mΩ, 40mΩ, 60mΩ, and 80mΩ. As a 1200V class SiC MOSFET, it supports a wide range of applications. - Improved
heat dissipation performance through top-side cooling: While the conventional D2PAK-7 dissipated heat through the PCB (PCB), QDPAK creates a heat path → the top surface of the chip → the package heatsink. Reduces thermal dependence on the substrate and increases freedom in thermal design. - Targeting
the EV and AI infrastructure market, adoption is anticipated in fields requiring high efficiency, such as EV onboard chargers (OBC), high-voltage DC/DC converters, EV chargers, solar power inverters, motor drives, and power systems for data centers.
🟧The SiC market is shifting from a “low on-resistance competition” to an era of “heat dissipation and implementation competition.”
In recent years, there has been ongoing competition to reduce on-resistance in the SiC MOSFET market. However, with the growing power demand from EVs and AI data centers, the challenge has emerged that even if chip performance is improved, heat cannot be sufficiently dissipated, preventing the original performance from being fully realized. Especially in AI data centers, as power consumption of GPUs and HBMs increases, power supply circuits are required to improve efficiency and power density, making heat dissipation performance the key factor in overall system performance.
Following this trend, major manufacturers are accelerating the development of top-side cooling packages, with Infineon launching the TOLT in 2021, onsemi TCPAK57 in 2022, and ROHM launching the TSC3PAK in 2026. Similarly, Nexperia’s QDPAK is positioned not just as a SiC chip but as a system proposal that includes “heat dissipation,” “implementation,” and “high density.”
🟧 Conclusion
The 1200V SiC MOSFET using QDPAK announced by Nexperia is a product that not only delivers excellent SiC performance but also achieves high heat dissipation and ease of implementation through top-side cooling. With the growth of EVs and AI data centers, competition in the SiC market is shifting beyond chip performance to include thermal design and overall system optimization.
Each company has its own unique features on top heat dissipation packages, and from the user’s perspective, the performance is good, but it’s not easy to replace. Ideally, I would like standardization to progress, but since it is also an important weapon for differentiation, each company will likely continue its own path for the time being.
