A next-generation inverter jointly developed by Israel’s VisIC and Austria’s AVL shows new possibilities for the EV market with higher efficiency and lower cost than SiC.
Dritev 2025, Baden-BadenVisIC showcases its D³GaN inverter demo at Dritev 2025 in Badvisic-tech.com
🟦VisIC and AVL Showcase High-Efficiency GaN Inverters
Israeli semiconductor company VisIC Technologies has unveiled a GaN-based inverter designed in collaboration with a subsidiary of powertrain development giant AVL. It is a product that achieves breakthrough efficiency and mass production in power electronics for electric vehicles (EVs).
- The new inverter runs at 400V/750A and is equipped with NXP-specific drivers
- Uses VisIC’s GaN-on-Silicon “D³GaN” technology and is controlled by AVL’s SOP eDrive algorithm
- In testing, it recorded an efficiency of 99.67% at 10 kHz and 99.8% at 5 kHz, outperforming SiC inverters by up to 0.5%
The inverter can reduce energy losses by more than 60% and achieve SiC-like performance at a silicon cost.
🟦Next-generation power devices for the era of EV mass production
Behind this announcement is the expansion of the EV market and the major trend of energy saving and cost-saving power devices. Silicon carbide (SiC) devices have high performance, but they are expensive, and mass-produced EVs are burdensome.
VisIC’s GaN-on-Silicon technology can be manufactured at common 200 mm and 300 mm silicon foundries, making it compatible with mass production systems and has environmental advantages such as low CO₂ emissions during manufacturing. By collaborating with AVL, the combination of highly reliable control technology and the advantages of GaN has made the path to practical application a reality.
🟦 Summary
The GaN inverter unveiled by VisIC and AVL is likely to be a new option to meet the needs of the EV market, achieving both high efficiency and mass production beyond SiC.
